1030nm Yb:YAG q-switched picosecond laser
1030nm laser is a common industrial laser. The ULaser uses microchip technology to make the 1030nm laser smaller to fit more situations. Yb:YAG crystals are the basis for 1030nm lasers. Using nonlinear crystal, 1030nm output light can be obtained by frequency doubling.
The most important advantage of the 1030nm laser is its pulsed laser power. Its output energy is up to 100µ J, and the average power is up to 160mW. Based on Yb:YAG crystals, our 1030nm laser has lower quantum loss, heat load and thermal conductivity.
These characteristics make our 1030nm laser a better choice for the industry. It shows good performance in micro processing, laser pumping and photochemical processing.
| Main features | Application |
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1030nm MJ Model and Parameter
| Model | UL1030-1kHz-100μJ-MJ004 |
| Wavelength(nm) | 1030 |
| Repetition frequency (KHz) | 1 |
| Average power(mW) | 100 |
| Output energy(uJ) | 100 |
| Pulse width (ps) | 1000 |
| Power stability (8h) | ±3% |
| Beam mode | TEM00 |
| Full-angle divergence angle Typ. (Mrad) level @ 1/e2 | 6 |
| Vertical @ 1 / e2 | 6 |
| Polarization characteristics | ＞100:1 |
| System power consumption（W） | ≤15 |
| Power input | 100-240 VAC,50/60Hz |
| Control interface | RS232、USB |
| Power supply size (W × H × L, mm) | 168×88×140 |
| Laser head size (W × H × L, mm) | 45×30×120 |
| Working temperature (℃) | 15-35 |
| Storage temperature (℃) | 0-60 |
| 1030nm MJ Microchip laser system PDF | |
| 1. * Side light emitting structure (non-marked products are central light emitting structure). | |
| 2. The built-in beam expansion function can be customized to meet the requirements of small divergence Angle (less than 2mrad). | |
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